半導体製造用縦型拡散炉の熱と流れの数値シミュレーション

概要

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A gas flow and heat transfer are simulated in a vertical pipe furnace for the heat treatment of semiconductor wafers. Firstly, the gas flow is simulated. Since the temperature variation is large in a furnace, compressibility of the gas is important. However, the Mach number of the gas flow is low; time-dependent integration schemes for the governing equations for a compressible flow become ineffective at low Mach numbers. Hence the governing equations are modified in order to circumvent the ineffectiveness. The modification derives the governing equations for the gas flow. They are solved by a finite difference method. Secondly, the temperature profile along the furnace axis shown by a thermocouple is simulated. The thermocouple is used without a radiation shield. Radiative heat transfer is discussed among the furnace surfaces and the measuring junction of the thermocouple; the temperature shown by the thermocouple is expressed in terms of the temperatures of the furnace surfaces. The expression yields the temperature profile. Finally, a simulation result is presented for a gas flow and a temperature profile in an empty furnace. The simulated temperature profile is in good agreement with an experimental profile.
日本シミュレーション学会の論文
1993-06-15