APPLICATIONS OF CHEMICAL-MECHANICAL-POLISHING PROCESS TO SILICON FIELD EMITTER ARRAY
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概要
- 論文の詳細を見る
We have fabricated and characterized silicon field emitter arrays by Chemical-Mechanical-Polishing (CMP) process for a clearly cutted gate electrode that was exactly aligned to the emitter. A very high etching selectivity (> 200 : 1) between the gate electrode and the dielectric was used for preveating the tip from etching off during the CMP. Furthermore, focusing electrodes were also fabricated by the CMP process.
- 社団法人映像情報メディア学会の論文
- 1997-02-14
著者
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Song Yoonho
Semiconductor Division Electronics And Telecommunications Research Institute
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Lee JinHo
Semiconductor Division, Electronics and Telecommunications Research Institute
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Cho KyoungIk
Semiconductor Division, Electronics and Telecommunications Research Institute
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Yoo HyungJoun
Semiconductor Division, Electronics and Telecommunications Research Institute
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Lee Jinho
Semiconductor Division Electronics And Telecommunications Research Institute
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Cho Kyoungik
Semiconductor Division Electronics And Telecommunications Research Institute
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Yoo Hyungjoun
Semiconductor Division Electronics And Telecommunications Research Institute
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Kang SungWeon
Semiconductor Technology Div., Electronics and Telecommunications Research Institute
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Yu ByoungGon
Semiconductor Technology Div., Electronics and Telecommunications Research Institute
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Lee SangYun
Department of Physics, Kyungpook National University
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Yu Byounggon
Semiconductor Division Electronics And Telecommunications Research Institute
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Lee Sangyun
Department Of Physics Kyungpook National University
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Kang Sungweon
Semiconductor Division Electronics And Telecommunications Research Institute
関連論文
- DEGRADATION MECHANISM OF ELECTRON EMISSION CHARACTERISTICS IN SILICON FIELD EMITTERS
- APPLICATIONS OF CHEMICAL-MECHANICAL-POLISHING PROCESS TO SILICON FIELD EMITTER ARRAY
- POLYCRYSTALLINE SILICON FIELD EMITTER ARRAYS WITH A GATED STRUCTURE