POLYCRYSTALLINE SILICON FIELD EMITTER ARRAYS WITH A GATED STRUCTURE
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概要
- 論文の詳細を見る
Gated polycrystalline silicon field emitter arrays have been fabricated by using a combined dry and wet etching technique for tip formation and a photoresist etch-back process for gate opening. The fabricated emitter with a tip radius of 〜100 A showed electron emissions at a gate voltage of 45 V, comparable to single crystalline silicon tips processed with a sharpening oxidation. The developed method can be applicable to glass-based field emitter displays with semiconductor IC technologies.
- 社団法人映像情報メディア学会の論文
- 1997-02-14
著者
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Song Yoonho
Semiconductor Division Electronics And Telecommunications Research Institute
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Lee JinHo
Semiconductor Division, Electronics and Telecommunications Research Institute
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Cho KyoungIk
Semiconductor Division, Electronics and Telecommunications Research Institute
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Yoo HyungJoun
Semiconductor Division, Electronics and Telecommunications Research Institute
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Lee Jinho
Semiconductor Division Electronics And Telecommunications Research Institute
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Cho Kyoungik
Semiconductor Division Electronics And Telecommunications Research Institute
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Yoo Hyungjoun
Semiconductor Division Electronics And Telecommunications Research Institute
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Kang SungWeon
Semiconductor Technology Div., Electronics and Telecommunications Research Institute
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Yu ByoungGon
Semiconductor Technology Div., Electronics and Telecommunications Research Institute
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Yu Byounggon
Semiconductor Division Electronics And Telecommunications Research Institute
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Kang Sungweon
Semiconductor Division Electronics And Telecommunications Research Institute
関連論文
- DEGRADATION MECHANISM OF ELECTRON EMISSION CHARACTERISTICS IN SILICON FIELD EMITTERS
- APPLICATIONS OF CHEMICAL-MECHANICAL-POLISHING PROCESS TO SILICON FIELD EMITTER ARRAY
- POLYCRYSTALLINE SILICON FIELD EMITTER ARRAYS WITH A GATED STRUCTURE