Electron transport in metal-amorphous silicon-metal memory devices (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム〔英文〕)

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概要

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• Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V(Cr/p^+a-Si : H/V)analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13K to 300K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials(i. e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p^+a-Si : H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.

• 社団法人映像情報メディア学会の論文
• 2000-11-15

著者

• Snell A.

  Department Of Electronics And Electrical Engineering Edinburgh University

• Hu J.

  School of Engineering, Napier University Edinburgh

• Hajto J.

  School of Engineering, Napier University Edinburgh

• Rose M.

  Department Of Applied Physics And Electronics & Manufacturing Engineering University Of Dundee

関連論文

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• Electron transport in metal-amorphous silicon-metal memory devices (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム〔英文〕)
• Formal Consequences of Conservation of Angular Momentum Projections

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