Micromagnetic Modeling of High Density Recording with Double Layered Perpendicular Media and Single Pole Head (第7回アジア情報記録技術シンポジウム〔英文〕)
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概要
- 論文の詳細を見る
In this work, micromagnetic simulations of writing and reading processes in a perpendicular system including a single pole head and a recording medium with soft underlayer (SUL) have been performed. The noise contribution from the recording layer increased with increasing grain size distribution of the recording layer but that from soft undelayer remained almost a constant at a given linear density. Details of the noise form the soft underlayer will be discussed. Also thermal decay over a long time scale of the recorded bits was investigated by the Langevin equation and the time-temperature scaling method. It was found that at the linear density of 1058 kfci, narrower grain size distribution in the recording layer is very important in the point of thermal decay than expectation
- 社団法人映像情報メディア学会の論文
- 2002-11-07
著者
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Lee S.
Dept. of OB
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Lee S.
Dept. Of Environmental Engineering Chungbuk National University
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Lee K.
Dept. Of Materials Science And Engineering:storage Lab. Samsung Advanced Institute Of Technology
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Tahk Y.w.
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Tahk Y
Dept. Of Materials Science And Engineering:storage Lab. Samsung Advanced Institute Of Technology
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Tahk Y.
Dept. of Materials Science and Engineering
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Lee K.
Strage Lab. Samsung Advanced Institute of Technology
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Lee T.
Dept. of Materials Science and Engineering
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Lee T.
Dept. Of Materials Science And Engineering:storage Lab. Samsung Advanced Institute Of Technology
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Lee T.
Dept. Advanced Mater. Eng. Korea Advanced Inst. Of Sci. & Tech. Seoul
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Lee S.
Dept. Of Materials Science And Engineering:storage Lab. Samsung Advanced Institute Of Technology
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Lee S.
Dept. Of Conservative Dentistry College Of Dentistry Kyung-hee University
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Lee K.j.
Samsung Advanced Institute Of Technology Storage Lab
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LEE S.
Dept. Mech. Eng., Pohang University of Science and Technology
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Lee T.
Strage Lab. Samsung Advanced Institute of Technology
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