ED2000-54 / SDM2000-54 Microprocessor Technologies beyond GHz

概要

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Aggressive transistor scaling has been the key factor for high performance microprocessor fabrication. As a result, the gate oxide is now in a regime that large direct tunneling leakage current might cause a serious circuit instability, reliability problem and high power consumption. Ultra-shallow S / D extension is also a limiting factor in terms of the trade-off between short-channel effect suppression and high series resistance. The threshold voltage scaling limit due to the signal-to-noise margin makes hard to meet the transistor performance target for low power supply voltage. SOI device provides an attractive solution in terms of low voltage / power operation and improved performance. However, its inherent floating body effects must be carefully engineered for the successful circuit integration. Pass-gate leakage current and history-dependent switching delay are the most important issues to be addressed. Future sub-0.13μm generation will requir SOI device architecture with new gate dielectric, elevated S / D extension and metal gate electrode. Interconnect delay is another significant factor in chip performance. Future interconnect technology will require a new material such as Cu with low resistivity and high electromigration resistance, as well as low-k intermetal dielectrics (MD) with reliable thermal and electrical properties.
社団法人電子情報通信学会の論文
2000-06-21