High-quality deep etching of GaN by VUV-UV multi wave length laser ablation
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概要
- 論文の詳細を見る
High-quality deep etching of GaN thin film by 266nm laser ablation coupled with a vacuum ultraviolet(VUV) Raman laser(133-184nm), followed by treatment in HCl solution, was achieved. The etch rate was as high as 55nm/pulse. Scanning electron microscopy and scanning probe microscopy measurement results indicate that the surface of the etched films was structurally well defined and cleanly patterned. Micro-photoluminescence measurement of ablated samples revealed no severe damage to the optical properties or the crystal structure. The mechanism of VUV-266nm laser ablation of GaN is discussed based on the band structure of GaN.
- 社団法人電子情報通信学会の論文
- 1997-06-17
著者
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Zhang J
理化学研究所
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Zhang J
Institute Of Fine Chemicals East China University Of Science And Technology
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Sugioka K
Institute of Physical and Chemical Research (RIKEN)
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Wada S
Institute of Physical and Chemical Research (RIKEN)
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Tashiro H
Institute of Physical and Chemical Research (RIKEN)
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Toyoda K
Institute of Physical and Chemical Research (RIKEN)
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Toyoda K
Department Of Applied Electronics Science University Of Takyo
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