Practical Device-Directed Ohmic Contacts on 4H-SiC
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概要
- 論文の詳細を見る
- 社団法人電子情報通信学会の論文
- 2003-04-01
著者
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Tanimoto Satoshi
Ultra Low-loss Power Device Technology Research Body (upr) : R&d Association For Future Electron
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KIRITANI Norihiko
Ultra Low-Loss Power Device Technology Research Body (UPR)
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HOSI Masakatu
Ultra Low-Loss Power Device Technology Research Body (UPR)
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OKUSHI Hideyo
Ultra Low-Loss Power Device Technology Research Body (UPR)
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ARAI Kazuo
Ultra Low-Loss Power Device Technology Research Body (UPR)
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Hosi Masakatu
Ultra Low-loss Power Device Technology Research Body (upr) : R&d Association For Future Electron
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Kiritani Norihiko
Ultra Low-loss Power Device Technology Research Body (upr) : R&d Association For Future Electron
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Arai Kazuo
Ultra Low-loss Power Device Technology Research Body (upr) : National Institute Of Advanced Industri
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Okushi Hideyo
Ultra Low-loss Power Device Technology Research Body (upr) : National Institute Of Advanced Industri
関連論文
- Practical Device-Directed Ohmic Contacts on 4H-SiC
- Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition