Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-06-15
著者
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Nishio Johji
Ultra-low-loss Power Device Technology Research Body And Advanced Power Device Laboratory R&d As
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Suzuki Takaya
Ultra-low-loss Power Device Technology Research Body And Advanced Power Device Laboratory R&d As
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ARAI Kazuo
Ultra Low-Loss Power Device Technology Research Body (UPR)
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KOJIMA Kazutoshi
Ultra-Low-Loss Power Device Technology Research Body and Advanced Power Device Laboratory, R&D Assoc
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KURODA Satoshi
Ultra-Low-Loss Power Device Technology Research Body and Power Electronics Research Center, National
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Kuroda Satoshi
Ultra-low-loss Power Device Technology Research Body And Power Electronics Research Center National
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Kojima Kazutoshi
Ultra-low-loss Power Device Technology Research Body And Advanced Power Device Laboratory R&d As
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Arai Kazuo
Ultra-low-loss Power Device Technology Research Body And Power Electronics Research Center National
関連論文
- Practical Device-Directed Ohmic Contacts on 4H-SiC
- Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition