Modeling on Statistical Distribution of Optimal Noise Figure in Pulse-Doped GaAs MESFET's

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概要

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• Process-related variation of optimal noise figures (F_o) in pulse-doped GaAs MESFET's is discussed in this paper. Fluctuation in gate length of the proposed devices is shown to be a dominant source of variation in noise parameters.The statistical distribution of the optimal noise figure is modeled by using the gaussian approximation of the distribution in gate length; the probability density function of F_o is derived. A comparison between the calculated results by the derived probability density function and the measured distribution of F_o showed good agreement.

• 社団法人電子情報通信学会の論文
• 1996-10-25

著者

• Shiga Nobuo

  Optoelectronics R & D Laboratories Sumitomo Electric Industries Ltd.

関連論文

• Low Consumption Power Application of Pulse-Doped GaAs MESFET's
• Modeling on Statistical Distribution of Optimal Noise Figure in Pulse-Doped GaAs MESFET's

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