Low Consumption Power Application of Pulse-Doped GaAs MESFET's

概要

論文の詳細を見る
The application of pulse-doped GaAs MESFET's to a power amplifier module is discussed in this paper. The epitaxial layer structure was redesigned to have a dual pulse-doped structure for power applications, achieving a sufficient gate-drain breakdown voltage with excellent linearity. The measured load-pull characteristics of the redesigned device for the minimum power consumption design was presented. This device was shown to have almost twice the power-added efficiency of a conventional ion-implanted GaAs MESFET. Two kinds of power amplifiers were designed and fabricated, achieving Pout of 28.6dBm at IM_3 of -40dBc with Pdc of 8W and Pout of 33.0dBm at IM_3 of -40dBc with Pdc of 32W, respectively.
社団法人電子情報通信学会の論文
1997-04-25