Microstructure Analysis Technique of Specific Area by Transmission Electron Microscopy (Special Issue on LSI Failure Analysis)
スポンサーリンク
概要
- 論文の詳細を見る
A procedure for preparing a cross-sectional transmission electron microscopy (TEM) micrograph of a specific area is outlined. A specific area in a specimen has been very difficult to observe with TEM, because a particular small area cannot be preselected in the conventional specimen preparation technique using mechanical polishing, dimpling and ion milling. The technique in this paper uses a focused ion beam (FIB) to fabricate a cross-sectional specimen at a desired area. The applications of this specimen preparation technique are illustrated for investigations of particles in the process of fabricating devices and degraded aluminum/aluminum vias. The specimen preparation technique using FIB is useful for observing a specific area. This technique is also useful for shortening the time of specimen preparation and observing wide areas of LSI devices.
- 社団法人電子情報通信学会の論文
- 1994-04-25
著者
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Fujii Shinji
Kyoto Research Laboratory Matsushita Electronics Corp.
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Hata Yoshifumi
Kyoto Research Laboratory, Matsushita Electronics Corp.
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Etoh Ryuji
Kyoto Research Laboratory, Matsushita Electronics Corp.
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Yamashita Hiroshi
Kyoto Research Laboratory, Matsushita Electronics Corp.
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Harada Yoshikazu
Kyoto Research Laboratory, Matsushita Electronics Corp.
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Harada Yoshikazu
Kyoto Research Laboratory Matsushita Electronics Corp.
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Etoh Ryuji
Kyoto Research Laboratory Matsushita Electronics Corp.
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Yamashita Hiroshi
Kyoto Research Laboratory Matsushita Electronics Corp.
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Hata Yoshifumi
Kyoto Research Laboratory Matsushita Electronics Corp.
関連論文
- Microstructure Analysis Technique of Specific Area by Transmission Electron Microscopy (Special Issue on LSI Failure Analysis)
- A Novel Atomic Force Microscopy Observation Technique for Secondary Defects of Ion Implantation, using Anodic Oxidation