Dynamic-Clustering and Grain-Growth Kinetics Effects on Dopant Diffusion in Polysilicon (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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概要

• 論文の詳細を見る

• A simulation model for arsenic diffusion in polycrystalline silicon has been developed considering dynamic dopant clustering and polysilicon grain growth kinetics tightly coupled with dopant diffusion and segregation. It was assumed that the polysilicon layer consists of column-like grains surrounded by thin grain-boundaries, so that one dimensional description is permissible for dopant diffusion. The dynamic clustering model was introduced for describing arsenic activation in polysilicon grains, considering the solubility limit increase for arsenic in a polysilicon. For a grain-growth calculation, a previous formula was modified to include a local carrier concentration dependence. The simulation results show that these effects are significant for a high dose implantation case.

• 社団法人電子情報通信学会の論文
• 1994-02-25

著者

• Hane M

  The Microelectronics Research Laboratories Nec Corporation

• Hasegawa Shinya

  The Microelectronics Research Laboratories Nec Corporation

• Hane Masami

  The Microelectronics Research Laboratories Nec Corporation

関連論文

• Dynamic-Clustering and Grain-Growth Kinetics Effects on Dopant Diffusion in Polysilicon (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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