Investigations of Gap Anisotropy of Bi_2Sr_2CaCu_2O_x Single Crystal by Electron Tunneling (Special Issue on High-Temperature Superconducting Electronics)

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概要

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• In order to investigate the characteristics of the superconducting gap structures of BSCCO oxide superconductor, tunneling spectrum measurements were carried out with several junctions on the bulk single crystal surfaces. Point contact tunneling studies by means of the M/I/S and S/(I)/S junctions have shown the reproducible gap values, 2Δ(//c-axis) of 40±2 meV, at the cleaved crystal surfaces, and the ratio of 2Δ(//)/k_BT_c=5.5±0.3 indicates the strong coupling superconductor of this material. Somewhat larger gap values, 2Δ_<max>(⊥ c-axis)=70±1 meV, have been also observed at the lateral surface, and these various gap values observed on each surface of the same crystal indicate the characteristic of the large gap anisotropy, Δ(⊥)/Δ(//)〜1.8, of this material.

• 社団法人電子情報通信学会の論文
• 1993-08-25

著者

• Aoki Ryozo

  Faculty Of Engineering Osaka University

• Murakami Hironaru

  Faculty Of Engineering Osaka University

関連論文

• Epitaxial Growth of Bi(2201) Phase in Atomic Layer-by-Layer Deposition by Ion Beam Sputtering Method (Special Issue on High-Temperature Superconducting Electronics)
• Possibility of Phonon-Assistance on Electronic Transport and the Cooper Pairing in Oxide Superconductors (Special Issue on High-Temperature Superconducting Electronics)
• Investigations of Gap Anisotropy of Bi_2Sr_2CaCu_2O_x Single Crystal by Electron Tunneling (Special Issue on High-Temperature Superconducting Electronics)

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