Low-Power 1/2 Frequency Dividers Using 0.1μm CMOS Circuits Built with Ultrathin SIMOX Substrates

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概要

• 論文の詳細を見る

• Four types of frequency dividers were fabricated on SIMOX / SOI (Separation by IMplanted OXygen / silicon on insulator) substrates. A novel circuit among these four circuits showed highest operation frequency of 1.2 GHz under 1-V supply voltage, the gate lengths of which were 0.15 and 0.1 μm. Power consumption was no more than 50 and 62 μW for both 0.15-and .1-μm gate designs, respectively.

• 一般社団法人電子情報通信学会の論文
• 1993-05-25

著者

• Fujishima M.

  Department Of Electronic Engineering University Of Tokyo

• Asada K.

  Department Of Electronic Engineering University Of Tokyo

• Omura Y.

  NTT LSI Laboratories

• Izumi K.

  NTT LSI Laboratories

• Asada K.

  Department of Cardiovascular Medicine, University of Tokyo

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• Low-Power 1/2 Frequency Dividers Using 0.1μm CMOS Circuits Built with Ultrathin SIMOX Substrates

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