Measurement of High-Speed Devices and Integrated Circuits Using Electro-Optic Sampling Technique (Special Issue on Opto-Electronics and LSI)
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概要
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Recent progress in high-speed semiconductor devices and integrated circuits (ICs) has outpaced the conventional measuring and testing instruments. With advent of ultrashort-pulse laser technology, the electro-optic sampling (EOS) technique based on the Pockels effect has become the most promising solution way of overcoming the frequency limit, whose bandwidth is approaching a terahertz. This paper reviews recent progress on the research of the EOS techniques for measuring ultrahigh-speed electronic devices and ICs. It describes both the principle of the EOS and the key technologies used for noncontact probing of ICs. Internal-node measurements of state-of-the-art high-speed ICs are also presented.
- 社団法人電子情報通信学会の論文
- 1993-01-25
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関連論文
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- Measurement of High-Speed Devices and Integrated Circuits Using Electro-Optic Sampling Technique (Special Issue on Opto-Electronics and LSI)