A Design of Novel nV_T Level Shift Circuits Using MOSFETs (Special Section on High-Performance MOS Analog Circuits)
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概要
- 論文の詳細を見る
Two types of novel nV_T level shift circuits based on the square law characteristics of MOSFETs have been proposed. These circuits generate V_<IN>+nV_T or V_<IN>-nV_T (where V_T is a threshold voltage), if the input voltage is applied as the V_<IN>. These circuits can be widely used in MOSFET characterization, compensating V_T effect, V_T measurement, level shifting, etc. Type 1 is directly derived from the nV_T-sift circuit proposed by Wang. Type 2 can reduce a total chip area than type 1 and has a wider input range. SPICE simulations show that the proposed circuits have a very wide input range and a small power consumption.
- 社団法人電子情報通信学会の論文
- 1994-02-25
著者
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HYOGO Akira
Faculty of Science and Technology, Tokyo University of Science
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SEKINE Keitaro
Faculty of Science and Technology, Tokyo University of Science
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Hyogo Akira
Faculty Of Science And Technology Science University Of Tokyo
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Sekine Keitaro
Faculty Of Science And Technology Okyo University Of Science
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