Focused Ion Beam Applications to Failure Analysis of Si Device Chip (Special Section on Reliability)

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概要

• 論文の詳細を見る

• New focused ion beam (FIB) methods for microscopic cross-sectioning and observation, microscopic cross-sectioning and elemental analysis, and aluminum film microstructure observation are presented. The new methods are compared to the conventional methods and the conventional FIB methods, from the four viewpoints such as easiness of analysis, analysis time, spatial resolution, and pinpointing precision. The new FIB methods, as a result, are shown to be the best ones totally judging from the viewpoints shown above.

• 社団法人電子情報通信学会の論文
• 1994-01-25

著者

• Nikawa K

  Nec Corp. Kawasaki‐shi Jpn

• NIKAWA Kiyoshi

  A&E Technology Center, NEC Corporation

関連論文

• Molecular Dynamics Simulation of Electromigration in Nano-sized Metal Lines
• Focused Ion Beam Applications to Failure Analysis of Si Device Chip (Special Section on Reliability)
• Novel Method for Defect Detection in Al Stripes by Means of Laser Beam Heating and Detection of Changes in Electrical Resistance

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