Improvement of "Soft Breakdown" Leakage of off-State nMOSFETs Induced by HBM ESD Events Using Drain Engineering for LDD Structure (Special Section on Reliability)

概要

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Leakage enhancement after an ESD event has been analyzed for output buffer LDD MOSFETs. The HBM ESD failure threshold for the LDD MOSFETs is only 200-300 V and the failure is the leakage enhancement of the off-state MOSFETs called as "soft breakdown" leakage. This leakage enhancement is supposed to be caused by trapped electrons in the gate oxide and/or creation of interface states at the gate overlapped drain region due to snap-back stress during the ESD event. The mechanism of the leakage can be explained by band-to-band and/or interface state-to-band tunneling of electrons. The improvement of the HBM ESD threshold has been also evaluated by using two types of drain engineering which are additional arsenic implantation for the output LDD MOSFETs and "offset" gate MOSFET as a protection circuit for the output pins. By using these drain engineering, the threshold can be improved to more than 2000 V.
社団法人電子情報通信学会の論文
1994-01-25