Efficient and Large-Current-Output Boosted Voltage Generators with Non-Overlapping-Clock-Driven Auxiliary Pumps for Sub-1-V Memory Applications(Electronic Circuits)

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概要

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• A new CMOS positive charge pump (NCP-1) is proposed and compared with the conventional pump in this paper. The comparison indicates that this NCP-1 scheme delivers 1.6 times larger output current into the load with roughly 10% area penalty than the conventional pump. To alleviate the area overhead of NCP-1, another new NCP-2 is proposed, where its current drivability is slightly lower than NCP-1 by as small as 5% but it achieves much smaller layout penalty as small as 2-3% compared with the conventional pump. The effectiveness of NCP-1 is verified experimentally in this paper by using 0.35-μm n-well process technology. These NCP-1 and NCP-2 are useful to DRAMs and NOR-type flash memories with sub-1-V V_<DD>, where their large-output-current nature is favorable.

• 社団法人電子情報通信学会の論文
• 2004-07-01

著者

• Kim Young-hee

  The Department Of Electronic Engineering Changwon National University

• Min Kyeong-sik

  The School Of Electrical Engineering Kookmin University

• Kim Daejeong

  The School Of Electrical Engineering Kookmin University

• Chung Jin-yong

  The Department Of Electronic And Electrical Eng. Pohang University Of Science And Technology (postec

• KIM Dong

  the School of Electrical Engineering, Kookmin University

• AHN Jin-Hong

  Memory R&D Division, Hynix Semiconductor Inc.

• Ahn Jin-hong

  Memory R&d Division Hynix Semiconductor Inc.

関連論文

• Efficient and Large-Current-Output Boosted Voltage Generators with Non-Overlapping-Clock-Driven Auxiliary Pumps for Sub-1-V Memory Applications(Electronic Circuits)
• Area Efficient ΔΣ Modulator Based on Power-Delay and Area Product for D/A Conversion(Electronic Circuits)

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