A Peak-Current-Reduced Full-Swing CMOS Output Driver(<Special Section>Analog Circuit and Device Technologies)

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概要

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• This letter proposes an output driver which reduces simultaneous switching noise without degradation of rise/fall time. At the start of transition period, the driver optimally uses both VDD and VSS current by switching of on-chip bypass capacitors. The proposed driver achieves 27-percent reduction in peak current with faster transition time.

• 社団法人電子情報通信学会の論文
• 2004-06-01

著者

• Sim Jae-yoon

  Dram Design Team Samsung Electronics

• Kwon Kee-won

  Dram Design Team Samsung Electronics

関連論文

• Offset-Compensated Direct Sensing and Charge-Recycled Precharge Schemes for Sub-1.0 V High-Speed DRAM's(Integrated Electronics)
• A Peak-Current-Reduced Full-Swing CMOS Output Driver(Analog Circuit and Device Technologies)

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