Ferroelectric Split-Gate-Field-Effect-Transistors for Nonvolatile Memory Cell Array(Ferroelectric Memory)(<Special Section>New Era of Nonvolatile Memories)

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概要

• 論文の詳細を見る

• A novel ferroelectric-gate transistor with split-gate structure has been proposed and its read out characteristics have been analyzed. "Transistor-type" FeRAMs have a problem in degradation of readout current, i.e. when the readout voltage is applied at the gate, the current of readout operation is smaller than that of write operation. We demonstrate by SPICE simulation that the proposed split-gate structure ferroelectric-FET can overcome the problem.

• 社団法人電子情報通信学会の論文
• 2004-10-01

著者

• Saiki Hirokazu

  The Precision And Intelligence Laboratory Tokyo Institute Of Technology

• Tokumitsu Eisuke

  The Precision And Intelligence Laboratory Tokyo Institute Of Technology

関連論文

• Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O_3 Films Fabricated Using Low-Pressure Consolidation Process(Ferroelectric Memory)(New Era of Nonvolatile Memories)
• Ferroelectric Split-Gate-Field-Effect-Transistors for Nonvolatile Memory Cell Array(Ferroelectric Memory)(New Era of Nonvolatile Memories)

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