Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O_3 Films Fabricated Using Low-Pressure Consolidation Process(Ferroelectric Memory)(<Special Section>New Era of Nonvolatile Memories)

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概要

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• We have fabricated ferroelectric Pb(Zr,Ti)O_3 (PZT) thin films using low-pressure consolidation process during the sol-gel method. Drastic improvements of electrical properties have been obtained for the PZT thin films fabricated with low pressure consolidation process. A remanent polarization (P_r) of 37μC/cm^2 and a coercive field (E_c) of 64kV/cm have been achieved. In addition, the leakage current of the PZT films fabricated using low-pressure consolidation is 10^2 times smaller than that of the films fabricated with the usual process of sol-gel method. It is also found that the low-pressure consolidation process is effective on improvements of electrical properties of PZT films fabricated at lower crystallization temperatures and with sub-100nm thickness.

• 社団法人電子情報通信学会の論文
• 2004-10-01

著者

• Tokumitsu Eisuke

  The Precision And Intelligence Laboratory Tokyo Institute Of Technology

• MIYASAKO Takaaki

  the Precision and Intelligence Laboratory, Tokyo Institute of Technology

• SENDO Masaru

  the Precision and Intelligence Laboratory, Tokyo Institute of Technology

• Sendo Masaru

  The Precision And Intelligence Laboratory Tokyo Institute Of Technology

• Miyasako Takaaki

  The Precision And Intelligence Laboratory Tokyo Institute Of Technology

関連論文

• Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O_3 Films Fabricated Using Low-Pressure Consolidation Process(Ferroelectric Memory)(New Era of Nonvolatile Memories)
• Ferroelectric Split-Gate-Field-Effect-Transistors for Nonvolatile Memory Cell Array(Ferroelectric Memory)(New Era of Nonvolatile Memories)

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