Improvement in Performance of Power Amplifiers by Defected Ground Structure(Microwaves, Millimeter-Waves)

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概要

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• This paper describes the performance improvement of power amplifiers by defected ground structure (DGS). Due to the excellent capability of harmonic rejection and tuning, DGS plays a great role in improving the major nonlinear behaviors of power amplifier such as output power, harmonics, power added efficiency (PAE), and the ratio between the carrier and the third order intermodulation distortion (C/IMD3). In order to verify the improvement of performances by DGS, measured data for a power amplifier, which adopts a 30 Watts LDMOS device for the operation at 2.1-2.2 GHz, are illustrated under several operating bias currents for two cases, i.e., with and without DGS attached. The principle of the improvement is described by the simple Volterra nonlinear transfer functions with the consideration of different operating classes. The obtained improvement of the 30 Watts power amplifier, under 400 mA of I_<dsQ> as an example, includes the reduction in the second and third harmonics by 17 dB and 20 dB, and the increase in output power, PAB, and C/IMD3 by 1.3 Watts, 3.4%, and 4.7dB, respectively

• 社団法人電子情報通信学会の論文
• 2004-01-01

著者

• Lim Jong-sik

  Korean Intellectual Property Office

• Jeong Yong-chae

  Division Of Electronics And Information Engineering Chonbuk National University

• AHN Dal

  Division of Information Technology Engineering, SoonChunHyang University

• NAM Sangwook

  Applied Electromagnetics Laboratory, Institute of New Media and Communications, School of Electrical

• Ahn Dal

  Division Of Information Technology Engineering Soonchunhyang University

• Nam Sangwook

  Applied Electromagnetics Laboratory Institute Of New Media And Communications School Of Electrical E

関連論文

• Improvement in Performance of Power Amplifiers by Defected Ground Structure(Microwaves, Millimeter-Waves)
• Improvement in Performance of Power Amplifiers by Defected Ground Structure
• A New Method for the Determination of the Extrinsic Resistances of MESFETs and HEMTs from the Measured S-Parameters under Active Bias
• Novel Periodic Structures for a Slotline : Patch Loaded Slotline(Microwaves, Millimeter-Waves)

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