Applications of GaN Microwave Electronic Devices(Special Issue on Microwave and Millimeter Wave Technology)

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概要

• 論文の詳細を見る

• We report in this paper, the performance of Al-GaN/GaN HFETs in the context of high power, low noise and high temperature operations, along with a comparison of their characteristics with other conventional technologies. Finally, a single stage modulator driver for long haul optical communications is presented as an example of application of the GaN-based devices high power handling capabilities.

• 社団法人電子情報通信学会の論文
• 2003-08-01

著者

• Venkataraman Sunitha

  Yamacraw Design Center School Of Ece Georgia Institute Of Technology

• NUTTINCK Sebastien

  Yamacraw Design Center, School of ECE, Georgia Institute of Technology

• GEBARA Edward

  Quellan, Inc.

• BANERJEE Baskar

  Yamacraw Design Center, School of ECE, Georgia Institute of Technology

• LASKAR Joy

  Yamacraw Design Center, School of ECE, Georgia Institute of Technology

• HARRIS Herbert

  Georgia Tech Research Institute

• Laskar Joy

  Yamacraw Design Center School Of Ece Georgia Institute Of Technology

• Gebara Edward

  Quellan Inc.

• Nuttinck Sebastien

  Yamacraw Design Center School Of Ece Georgia Institute Of Technology

• Banerjee Baskar

  Yamacraw Design Center School Of Ece Georgia Institute Of Technology

関連論文

• Applications of GaN Microwave Electronic Devices(Special Issue on Microwave and Millimeter Wave Technology)
• Dispersion Mechanisms in AlGaN/GaN HFETs(Special Issue on Microwave and Millimeter Wave Technology)

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