Dispersion Mechanisms in AlGaN/GaN HFETs(Special Issue on Microwave and Millimeter Wave Technology)

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概要

• 論文の詳細を見る

• We report the investigation of major dispersion mechanisms such as self-heating, trapping, current collapse, and floating-body effects present in AlGaN/GaN HFETs. These effects are analyzed using DC/Pulsed IV, load-pull, low-frequency noise systems, and a cryogenic probe station. This study leads to a better understanding of the device physics, which is critical for accurate large-signal modeling and device optimization.

• 社団法人電子情報通信学会の論文
• 2003-08-01

著者

• LASKAR Joy

  Yamacraw Design Center, School of ECE, Georgia Institute of Technology

• Laskar Joy

  Yamacraw Design Center School Of Ece Georgia Institute Of Technology

• Gebara Edward

  Quellan Inc.

• Nuttinck Sebastien

  Yamacraw Design Center School Of Ece Georgia Institute Of Technology

• PINEL Stephane

  Yamacraw Design Center, School of ECE, Georgia Institute of Technology

• Pinel Stephane

  Yamacraw Design Center School Of Ece Georgia Institute Of Technology

関連論文

• Applications of GaN Microwave Electronic Devices(Special Issue on Microwave and Millimeter Wave Technology)
• Dispersion Mechanisms in AlGaN/GaN HFETs(Special Issue on Microwave and Millimeter Wave Technology)

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