The Process Modeling Hierarchy : Connecting Atomistic Calculations to Nanoscale Behavior(<Special Issue>the IEEE International Conference on SISPAD '02)

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概要

• 論文の詳細を見る

• In this work, we review our recent efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation. We focus on three example applications : the behavior of implanted fluorine, arsenic diffusion and activation, and the impact of charge interactions on doping fluctuations.

• 一般社団法人電子情報通信学会の論文
• 2003-03-01

著者

• Dunham S

  The Department Of Electrical Engineering The University Of Washington

• Dunham Scott

  The Department Of Electrical And Computer Engineering At Boston University

• FASTENKO Pavel

  the Department of Electrical Engineering,the University of Washington

• QIN Zudian

  the Department of Electrical Engineering,the University of Washington

• DIEBEL Milan

  the Department of Physics,the University of Washington

• Qin Zudian

  The Department Of Electrical Engineering The University Of Washington

• Fastenko Pavel

  The Department Of Electrical Engineering The University Of Washington:(present Address)advanced Micr

• Diebel Milan

  The Department Of Physics The University Of Washington

関連論文

• Modeling of Dopant Diffusion in Silicon (Special Issue on TCAD for Semiconductor Industries)
• The Process Modeling Hierarchy : Connecting Atomistic Calculations to Nanoscale Behavior(the IEEE International Conference on SISPAD '02)

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