Modeling of Dopant Diffusion in Silicon (Special Issue on TCAD for Semiconductor Industries)

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概要

• 論文の詳細を見る

• Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.

• 社団法人電子情報通信学会の論文
• 1999-06-25

著者

• Gencer Alp

  The Department Of Electrical And Computer Engineeringat Boston University

• Dunham Scott

  The Department Of Electrical And Computer Engineering At Boston University

• Chakravarthi Srinivasan

  The Department Of Manufacturing Engineering At Boston University

関連論文

• Modeling of Dopant Diffusion in Silicon (Special Issue on TCAD for Semiconductor Industries)
• The Process Modeling Hierarchy : Connecting Atomistic Calculations to Nanoscale Behavior(the IEEE International Conference on SISPAD '02)

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