Simulations of High-Frequency Thermal Noise in Silicon-on-Insulator MOSFETs Using Distributed-Transmission-Line Model(Special lssue on Silicon RF Device & lntegrated Circuit Technologies)

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概要

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• The radio-frequency thermal noise in fullydepleted (FD) silicon-on-insulator (SOI) MOSFETs and bulk MOSFETs is theoretically examined using a distributed-transmission-line model. tis shown that the thermal noise in a scaled-down SOI MOSFET is basically smaller than that in a scaled-down bulk MOSFET in a wide frequency range. In the radio-frequency range, parasitic resistances in source and drain don't yield a remarkable contribution to the difference in output thermal noise power between scaled-down bulk MOSFETs and scaled-down SOI MOSFETs. However, the output thermal noise of scaled-down SOI MOSFETs with a finite parasitic resistance is smaller than that of scaled-down bulk MOSFETs because smaller channel capacitance.

• 社団法人電子情報通信学会の論文
• 2002-07-01

著者

• Sumino Daijiro

  Department Of Electronics Kansai University

• Omura Yasuhisa

  Department Of Electronics Kansai University

• Omura Yasuhisa

  Department Of Applied Science Faculty Of Engineering Kyusyu University Electronic Equipment Develop

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