Low V_<be> GaInAsN Base Heterojunction Bipolar Transistors(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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概要

• 論文の詳細を見る

• We report here on the electrical and structural characteristics of InGaP/GaInAsN DHBTs with up to a 50mV reduction in turn-on voltage relative to standard InGaP/GaAs HBTs. High p-type doping levels(〜3×10^<19>cm^<-3>)and dc current gain(β-<max> up to 100)are achieved in GaInAsN base layer structures ranging in base sheet resistance between 250 and 750Ω/□. The separate effects of a base-emitter conduction band spike and base layer energy-gap on turn-on voltage are ascertained by comparing the collector current characteristics of several different GaAs-based bipolar transistors. Photoluminescence measurements are made on the InGaP/GaInAsN DHBTs to confirm the base layer energy gap, and double crystal x-ray diffraction spectrums are used to assess strain levels in the GaInAsN base layer.

• 社団法人電子情報通信学会の論文
• 2001-10-01

著者

• Deluca Paul

  Kopin Corporation

• Pan Noren

  Kopin Corporation

• Pan Noren

  Kopin

• WELSER Roger

  Kopin Corporation

• WANG Alexander

  Kopin Corporation

関連論文

• Low V_ GaInAsN Base Heterojunction Bipolar Transistors(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• Reliability of InGaP and AlGaAs HBT(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)
• HBT Collector Characterization by the Spectral Photocurrent Technique(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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