Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)

概要

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Heterojunction bipolar transistors (HBTs) are key devices for a variety of applications including L-band power amplifiers, high speed A/D converters, broadband amplifiers, laser drivers, and low phase noise oscillators. AlGaAs emitter HBTs have demonstrated sufficient reliability for L-band mobile phone applications. For applications which require extended reliability performance at high junction temperatures (> 250℃) and large current densities (> 50kA/cm^2), lnGaP emitter HBTs are the preferred devices. The excellent reliability of InGaP/GaAs HBTs has been confirmed at various laboratories. At a moderate current density and junction temperature, J_c = 25kA/cm^2 and T_j = 264℃, no device failures were reported out to 10,000 hours in a sample of 10 devices. Reliability testing performed up to a junction temperature of 360℃ and at a higher current density (J_c = 60kA/cm^2) showed an extrapolated MTTF of 5 × 10^5 hours at T_j = 150℃. The activation energy for AlGaAs/GaAs HBTs was 0.57 eV, while the activation energy for InGaP/GaAs HBTs was 0.68 eV which indicated a similar failure mechanism for both devices.
社団法人電子情報通信学会の論文
1999-11-25