Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors (Special lssue on SISPAD'99)

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概要

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• We present calculations of the linear-response conductance of a SiGe based single-electron transistor (SET). The conductance and the discrete charging of the quantum dot are calculated by free-energy minimization. The free-energy calculation takes the discrete level-spectrum as well as complex many-body interactions into account. The tunneling rates for tunneling through the source and lead barrier are calculated using Bardeen's transfer Hamiltonian formalism [1]. The tunneling matrix elements are calculated for transitions between the zerodimensional states in the quantum dot and the lowest subband in the one-dimensional constriction. We compare the results for the conductance peaks with those from calculations with a constant tunneling rate where the shape of the peaks is only due to energetic arguments.

• 一般社団法人電子情報通信学会の論文
• 2000-08-25

著者

• Fichtner Wolfgang

  The Institut Fur Integrierte Systeme

• SCHENK Andreas

  the Institut fiir Integrierte Systeme

• Scholze Andreas

  the Institut fur Integrierte Systeme

• Fichtner Wolfgang

  the Institut fiir Integrierte Systeme

関連論文

• Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation(the IEEE International Conference on SISPAD '02)
• Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver (Special lssue on SISPAD'99)
• Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors (Special lssue on SISPAD'99)

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