Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver (Special lssue on SISPAD'99)

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概要

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• We compare the numerical results for electron direct tunneling currents for single gate oxides, ON-and ONO-structures. We demonstrate that stacked dielectrics can keep the tunneling currents a few orders of magnitude lower than electrostatically equivalent single oxides. We also discuss the impact of gate material and of the modeling of electron transport in silicon.

• 社団法人電子情報通信学会の論文
• 2000-08-25

著者

• Schenk A

  The Institut Fiir Integrierte Systeme

• Fichtner W

  The Institut Fiir Integrierte Systeme

• Fichtner Wolfgang

  The Institut Fur Integrierte Systeme

• SCHENK Andreas

  the Institut fiir Integrierte Systeme

• Wettstein Andreas

  the Institut fur Integrierte Systeme

• Fichtner Wolfgang

  the Institut fiir Integrierte Systeme

関連論文

• Simulation of RF Noise in MOSFETs Using Different Transport Models
• Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation(the IEEE International Conference on SISPAD '02)
• Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver (Special lssue on SISPAD'99)
• Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors (Special lssue on SISPAD'99)

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