Increasing Importance of Electronic Thermal Noise in Sub-0.1μm Si-MOSFETs (Special lssue on SISPAD'99)

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概要

• 論文の詳細を見る

• We investigate the intrinsic current fluctuations in small Si-MOSFETs via the Monte Carlo device simulation. It is demonstrated that the temporal fluctuation of the drain current in Si-MOSFETs attains a significant fraction of the averaged drain current when the device width is scaled down to the deep sub-μm regime. This is caused by the drastic decrease in the number of channel electrons. This finding holds true whenever the device width is reduced to deep sub-μm, regardless of the channel length. Most importantly, current fluctuation is associated with the quasi-equilibrium thermal noise in the heavilydoped source and drain regions, whereas its magnitude with respect to the averaged drain current is directly related to the number of channel electrons underneath the gate.

• 社団法人電子情報通信学会の論文
• 2000-08-25

著者

• Sano N

  Univ. Tsukuba Tsukuba Jpn

• Sano Nobuyuki

  The Institute Of Applied Physics University Of Tsukuba

関連論文

• A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode (Special Issue on Integrated Electronics and New System Paradigms)
• Increasing Importance of Electronic Thermal Noise in Sub-0.1μm Si-MOSFETs (Special lssue on SISPAD'99)

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