A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode (Special Issue on Integrated Electronics and New System Paradigms)

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概要

• 論文の詳細を見る

• The current-voltage characteristics of a single electron transistor (SET) in the resonant transport mode are investigated. In the future when SET devices are applied to integrated electronics, the quantum effect will seriously modify their characteristics in ultra-small geometry. The current will be dominated by the resonant transport through narrow energy levels in the dot. The simple case of a two-level system is analyzed and the transport mechanism is clarified. The transport property at low temperatures (higher than the Kondo temperature) in the low tunneling rate limit is discussed, and a current map where current values are classified in the gate bias-drain bias plane is provided. It was shown that the dynamic aspect of electron flow seriously influences the current value.

• 社団法人電子情報通信学会の論文
• 1999-09-25

著者

• Sano Nobuyuki

  The Institute Of Applied Physics University Of Tsukuba

• Natori K

  Univ. Tsukuba Tsukuba‐shi Jpn

• NATORI Kenji

  The Institute of Applied Physics, University of Tsukuba

関連論文

• A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode (Special Issue on Integrated Electronics and New System Paradigms)
• Increasing Importance of Electronic Thermal Noise in Sub-0.1μm Si-MOSFETs (Special lssue on SISPAD'99)

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