Characteristics of Low-Temperature-Processed a-Si TFT for Plastic Substrates(Special Issue on Electronic Displays)

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概要

• 論文の詳細を見る

• The a-Si TFT characteristics were studied for process temperatures of as low as 100℃. The a-Si TFT kept normal characteristics for process temperature of as low as 150℃. The a-Si TFT bias temperature stability was evaluated and degradation of stability initiated at around 150℃. The characteristics of a-Si TFT fabricated on plastic substrates were the same as those of a-Si TFT fabricated on glass substrates at low process temperature. TFT-LCD fabricated at a process temperature lower than the glass transition temperature of plastic substrates indicated good display image. These results indicate the possibility of fabricating TFT-LCD on plastic substrates, which would promote the application of a-Si TFT-LCD for mobile devices.

• 社団法人電子情報通信学会の論文
• 2000-10-25

著者

• Ashida Sumio

  The Author Is With Display Materials And Devices Research Laboratory Corporate Research And Developm

• Yamada Keisaku

  The Author Is With Display Materials And Devices Research Laboratory Corporate Research And Developm

• Ikeda Mitsushi

  The Author Is With Display Materials And Devices Research Laboratory Corporate Research And Developm

• MIZUTANI Yoshihisa

  The author is with Display Materials and Devices Research laboratory, Corporate Research and Develop

• Mizutani Y

  The Author Is With Display Materials And Devices Research Laboratory Corporate Research And Developm

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• Characteristics of Low-Temperature-Processed a-Si TFT for Plastic Substrates(Special Issue on Electronic Displays)

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