All-NbN Single Flux Quantum Circuits Based on NbN / AlN / NbN Tunnel Junctions(Special Issue on Superconductive Devices and Systems)
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概要
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We report on the fabrication and operation of all-NbN single flux quantum(SFQ)circuits with resistively shunted NbN / AlN / NbN tunnel junctions fabricated on silicon substrates.The critical current varied by about ±5% in 400NbN / AlN / NbN junction arrays, where the junction area was 8×8μm^2.Critical current densities of the NbN / AlN / NbN tunnel junctions showed exponential dependence on the deposition time of the AlN barrier.By using the 12-nm-thick Cu film as shunted resistors, non-hysteretic current-voltage characteristics were achieved.From dc-SQUID measurements, the sheet inductance of our NbN stripline was estimated to be around 1.2pH at 4.2K.We designed and fabricated circuits consisting of dc / SFQ converters, Josephson transmission lines, and T flip-flop-based SFQ / dc converters.The circuits demonstrated correct operation with a bias margin of more than ±15% at 4.2K.
- 一般社団法人電子情報通信学会の論文
- 2000-01-25
著者
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Terai Hirotaka
Kansai Advanced Research Center Communications Research Laboratory Ministry Of Posts And Telecommuni
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Wang Zhen
Kansai Advanced Research Center Communications Research Laboratory
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Wang Zhen
Kansai Advanced Research Center Communications Research Laboratory Ministry Of Posts And Telecommuni
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