High Speed Monolithically Integrated p-i-n/HBT Photoreceivers

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概要

• 論文の詳細を見る

• The characteristics of high-perfbrmance InP-based monolithically integrated single and mllltiple channel photoreceivers with an InGaAs p-i-n photodiode and In-AlAs/InGaAs HBTs, realized by one-step molecular beam epitaxy, are described. The monolithically integrated photoreceiver includes an integrated spiral inductor following the p-i-n diode at the input of the transimpedance amplifier to enhance the circuit response at high frequencies. Crosstalk of the multi-channel photoreceiver arrays is greatly reduced by applying both a metal ground shield and dual bias. The maximum measured -3 dB bandwidth of a single-channel integrated p-i-n/HBT photoreceiver is 19.5 GHz and the minimum crosstalk of the photoreceiver arrays, with an individual channel bandwidth of 11.5 GHz, is -36 dB. At these performance levels, these OEICs represent the state-of-the-art in multichannel integrated photoreceiver arrays.

• 社団法人電子情報通信学会の論文
• 1997-05-25

著者

• Zhang X

  Tsinghua Univ. Beijing Chn

• SYAO Kao-Chih

  Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The U

• AITKEN Augusto

  Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The U

• YANG Kyounghoon

  Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The U

• ZHANG Xiangkun

  Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The U

• HADDAD George

  Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The U

• BHATTACHARYA Pallab

  Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The U

• Haddad George

  Solid State Electronics Laboratory Department Of Electrical Engineering And Computer Science The Uni

• Syao Kao-chih

  Solid State Electronics Laboratory Department Of Electrical Engineering And Computer Science The Uni

• Aitken Augusto

  Solid State Electronics Laboratory Department Of Electrical Engineering And Computer Science The Uni

• Yang Kyounghoon

  Solid State Electronics Laboratory Department Of Electrical Engineering And Computer Science The Uni

• Bhattacharya Pallab

  Solid State Electronics Laboratory Department Of Electrical Engineering And Computer Science The Uni

関連論文

• High Speed Monolithically Integrated p-i-n/HBT Photoreceivers
• Influence of Cross-Sectional Deformation on Coplanar Waveguide Characteristics for the Use of Optical Modulator (Special Issue on Electromagnetic Theory)
• Quantum Dot Intersubband Devices

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