Low-Power and High-Speed LSIs Using O.25-μm CMOS/SIMOX (Special Issue on Low-Power and High-Speed LSI Technologies)

概要

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Various high-performance SOI CMOS circuits were fabricated using fully-depleted 0.25-μm gate MOSFETs on a low-dose SIMOX substrate. 2.4-Gbps operations were achieved for I/O and speed conversion circuits which are key elements in a multimedia communication LSI. LVTTL-cmpatible gate array LSI was developed with an ESD protection circuit which is the first one to meet the MIL standard. A 120-kG test LSI was fabricated on the gate array, and the LSI performances using three kind of technologies; 0.25-μm bulk and SIMOX and 0.5-μm bulk; were compared. A 0.25-μm SIMOX LSI was 10% faster with 35% less power dissipation compared with a 0.25-μm bulk LSI. The 0.25-μm SIMOX LSI can oprate at a V_<DD> of 1.2 V to attain the same speed as the 0.5-μm bulk LSI operating at 3.3 V, and this results in 1/40 power reduction. For the high-speed communication use, an ATM-switch LSI with 220-kG and a 110-kb memory was fabricated. A high-performance of 2.5-Gbps interface speed and 312-Mbps internal speed were achieved using 0.25-μm CMOS/SIMOX. This ATM-switch LSI has the greatest bandwidth of 40-Gbps ever reported using a one-chip ATM-switch LSI.
社団法人電子情報通信学会の論文
1997-12-25