Highly Efficient 1.5-GHz Band Si Power MOS Amplifier Module

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概要

• 論文の詳細を見る

• A 1.5 GHz band Si power MOS amplifier module with 50% total efficiency, 1 W output power and 30 dB power gain has been developed for front-end transmitter of digital cellular telephones. A combination of a highly efficient power MOSFET for the output stage and an integrated two stage MOS amplifier for the driver with an impedance matching circuit minimizing the length of striplines made it possible to achieve high total efficiency, high power gain, and smaller size of the amplifier module.

• 社団法人電子情報通信学会の論文
• 1995-08-25

著者

• Yoshida I

  The Authors Are With Sanyo Electric Co. Ltd. Tsukuba Research Center

• Yoshida I

  Hitachi Ltd. Kokubunji‐shi Jpn

• Yoshida Isao

  Semiconductor amp Integrated Circuits Div., Hitachi, Ltd.

• Katsueda Mineo

  Semiconductor amp Integrated Circuits Div., Hitachi, Ltd.

• Katsueda Mineo

  Semiconductor Amp Integrated Circuits Div. Hitachi Ltd.

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• Highly Efficient 1.5-GHz Band Si Power MOS Amplifier Module

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