Enhancement of tunneling magnetoresistance by adding Co clusters in the Co/Al_2O_3/NiFe junctions
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概要
- 論文の詳細を見る
Spin-dependent tunnel magnetoresistance of Co/Al_2O_3/Co_x/NiFe was studied as a function of the thickness of Co_x. The thickness (X) of the doped Co was varied between 0.8nm and 2.0nm. An increase in tunneling magnetoresistance ratio from 3.5% to 9% was found for the spin-dependent tunnel junctions with 0.8nm to 2.0nm of doped Co_x. The enhanced tunneling magnetoresistance may be attributed to the increasing in the effective polarization of the tunnel electron due to the spin-filtering effect from the doped material.
- 社団法人電子情報通信学会の論文
- 2000-11-09
著者
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Lo C.k.
Information Storage Division Opto-electronics & System Lab. Industrial Technology Research Insti
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Ho C.h.
Department Of Physics National Taiwan University
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Lin M.T.
Department of Physics, National Taiwan University
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Yao Y.D.
Information Storage Division, Opto-Electronics & System Lab., Industrial Technology Research Institu
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Lee S.F.
Information Storage Division, Opto-Electronics & System Lab., Industrial Technology Research Institu
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Liou Y.
Information Storage Division, Opto-Electronics & System Lab., Industrial Technology Research Institu
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S.f. Lee
Institute Of Physics Academia Sinica
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Lin M.t.
Department Of Physics National Taiwan University
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Yao Y.d.
Institute Of Physics Academia Sinica
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Huang D.r.
Information Storage Division Opto-electronics & System Lab. Industrial Technology Research Insti
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Lee S.f.
Information Storage Division Opto-electronics & System Lab. Industrial Technology Research Insti
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Liou Y.
Information Storage Division Opto-electronics & System Lab. Industrial Technology Research Insti
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Lin M.
Department Of Electrical Engineering National Tsing Hua University
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Yao Y.d.
Information Storage Division Opto-electronics & System Lab. Industrial Technology Research Insti
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Lo C.
Information Storage Division Opto-electronics & System Lab. Industrial Technology Research Insti
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Ho C.
Department Of Chemical Engineering National Central University
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Yao Y.
Information Storage Division, Opto-Electronics & System Lab., Industrial Technology Research Institute
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HUANG D.
Information Storage Division, Opto-Electronics & System Lab., Industrial Technology Research Institute
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