DLTS Determination of the Mo Acceptor Level in Mo-GaAs_<0.6>P_<0.4> Schottky Diodes
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概要
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The results of deep level transient spectroscopy (DLTS) and Auger electron spectroscopy (AES) have shown the correlation between the trap levels, existing in the metal-semiconductor interface or in the bulk of these thermally degraded Mo-GaAs_<0.6>P_<0.4> Schottky diodes, and the metal-semiconductor interdiffusion. These trap levels will enhance the generation-recombination effect and degrade the diode performance. From the experimental results, it reveals that the Mo-indifiusion induced hole trap E_v + (0.83 ± 0.01 ) eV plays a major role in Mo-GaAs_<0.6>P_<0.4> Schottky diode degradation.
- 社団法人応用物理学会の論文
- 1983-06-20
著者
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Lin M.
Department Of Electrical Engineering National Tsing Hua University
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Lou J.
Department Of Electrical Engineering National Tsing Hua University
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WAN C.
Department of Electrical Engineering National Tsing Hua University
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Wan C.
Department of Chemical Engineering, National Tsing Hua University
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