Fabrication and Recording Characteristics of Sputter-deposited Ferrite Thin Film Disks
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概要
- 論文の詳細を見る
M-type Ba ferrite(BaM)disks were prepared on Pt and Pt-Ta underlayers using facing targets sputtering apparatus. Pt underlayers are more stable and more effective than ZnO underlayers to promote the c-axis orientation of BaM layers deposited on them, especially for extremely thin BaM films. Pt-Ta underlayer was used to decrease the grain size of BaM layers deposited on them. BaM/Pt-Ta disks revealed larger S/N ratio than BaM/Pt disks because of their larger signal output and lower media noise level. BaM disks with 50nm thick BaM layers revealed lower noise level and larger S/N ratio than that with 100 nm thick BaM layers due to smaller grain size.
- 社団法人電子情報通信学会の論文
- 2000-11-07
著者
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Nakagawa S.
Dept. Obst. and Gynec., Hyogo Medical College
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Naoe M.
Department Of Physical Electronics Tokyo Institute Of Technology
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Funabashi N.
Dept.of Physical Electronics, Tokyo Institute of Technology
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Feng J.
Dept.of Physical Electronics, Tokyo Institute of Technology
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Naoe M.
Dept.of Physical Electronics, Tokyo Institute of Technology
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Funabashi N.
Dept.of Physical Electronics Tokyo Institute Of Technology
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Feng J.
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakagawa S.
Department Of Physical Electronics Tokyo Institute Of Technology
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NAKAGAWA S.
Dept. Biochemistry, Nihon Univ. Sch. Med.
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