Thermoanalytical study of phase-change optical recording medium

概要

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In general, GeTeSb ternary alloy has been used as phase-change optical recording mrdium by using its differential reflectivity of crystalline phase or amorphous phase. In this experiment, GeTeSb film was deposited by using RF sputtering process. Thermal properties of GeTeSb film was measured with a differential sacnning calorimeter (DSC) under different heating rates. From DSC curves, the melting point of GeTeSb film is about 390℃ under different heating rates, while the crystallization temperature is varied under different heating rates. With heating rate increased from 10℃/min to 200℃/min, the crystakkization temperature is increased from 170℃ to 198℃. In real recording process of phase-change optical disk, the heating rate is much higher than 200℃/min. The three activation energy of crystalline phase respectively 1.86 eV, 1.93 eV, and 1.79 eV, can be obtained with Kissinger method. We can estimate the crystallization temperature in the recording process is around 230℃〜250℃ by numerical extrapolation method from DSC data. It is a useful method to predict the thermal properties of phase change recording medium. A detailed experimental data and analysis will be discussed.
社団法人電子情報通信学会の論文
1996-11-21