有機元素分析計によるアモルファスシリコン薄膜組成分析の検討

概要

論文の詳細を見る
An organic elemental analyzer with the differential thermal conductivity method for carbon, hydrogen, and nitrogen determination was applied to the analysis of thin films of amorphous silicon. The analytical values were compared with those obtained by gas analysis method for metal as the standards. In the case of hydrogen determination for silicon hydride by this method, (1) the bias was ±0.00〜0.15 wt%, and the relative standard deviation (n=9) was 2.6〜6.7%, both at 0.50〜0.80 wt% hydrogen content, and (2) with 5 mg of samples, the determination limit, namely, 10 times the standard deviation was 0.007 wt%. However, the bias of hydrogen determination for silicon hydride nitride was -0.18wt% at 1.14 wt% hydrogen content. There were large minus errors in the cases of nitrogen determination for silicon hydride nitride, and of hydrogen and carbon determination for silicon hydride carbide.
社団法人日本分析化学会の論文
1985-12-05