液相溶解/黒鉛炉原子吸光法によるシリコンウェハー表面金属不純物の面内分布分析

概要

論文の詳細を見る
A new sampling apparatus for the liquid-phase dissolution and graphite-furnace AAS technique has been developed in order to examine the distribution of trace metallic impurities on a silicon wafer. The apparatus is equipped with five indicater-rods and a wafer-moving stage for collecting metallic impurities at different areas on a wafer. Although the detection limit is raised with decreasing the sampling area, it reactes 10^8 to 10^9 atoms cm^<-2> when a hydrofluoric acid solution of 20 μl is used for determing one metallic element in a sampling area of 1225 mm^2.
社団法人日本分析化学会の論文
1997-05-05