液相溶解 : 黒鉛炉原子吸光法によるシリコンウェハー表面の金属不純物の分析

概要

論文の詳細を見る
We report a novel method for analyzing trace metallic impurities on a Si wafer. The technique using an indicator-rod was developed for collecting metallic impurities, and their concentrations were measured by graphite furnace AAS. Since the operation of the impurity-collecting apparatus was simple and easy, no additional contamination was found on the sample wafer during the collecting operation. The use of a small amount of hydrofluoric acid solution was sufficient to collect metallic impurities completely. For a 6-inch Si wafer, the present method wasapplicable to the determination of 10^8〜-10^9 atoms cm^<-2> for most metallic impurities.
社団法人日本分析化学会の論文
1995-11-05