ウルツ鉱型(Ga,Mn)N膜の成長と物性

概要

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GaN, one of the best-known wide-band-gap semiconductors, is a promising material for optical and electronic devices. In the field of spintronics, wide-band-gap semiconductors have received much attention as a result of some theoretical predictions that they would be candidate base materials for room-temperature ferromagnetic semiconductors. On the basis of these theoretical findings, we grew GaN films with Mn by molecular beam epitaxy using ammonia as a nitrogen source. The grown films, with Mn concentrations of 37%, show ferromagnetic behavior at room temperature. It was confirmed that the films have wurtzite structure with substitutional Mn on the Ga site in GaN, which is the crystallographic assumption of the theoretical study of diluted magnetic semiconductors. Other crystallographic characteristics of the grown films suggest that they are diluted magnetic semiconductors of the form (Ga, Mn)N.
社団法人日本磁気学会の論文
2003-01-01