ナノ接合におけるBallistic Magnetoresistance (BMR)効果

概要

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Recent advances in the ballistic magnetoresistance (BMR) of magnetic nanocontacts are reported. The BMR ratio of 200% discovered in Ni nanocontact in 1999 has now reached around 100,000%. BMR in nanocontacts has great advantages in applications, including a very large MR ratio, room-temperature operation, and high-density storage. Possible mechanisms are scattering by a domain wall, zig-zag motion due to a domain wall, and extrinsic effects such as magnetostriction. Extremely high MR ratios may be due to formation of highly spin-polarized conducting channels in nanowires, particularly in the presence of impurities. Further detailed research, both experimental and theoretical, is needed to clarify the mechanism and to control the effects.
社団法人日本磁気学会の論文
2003-07-01