シリコンの単結晶成長における酸素の混入と融液内対流

概要

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Experimental and analytical studies on the oxygen-incorporation mechanism in Czochralski (CZ) silicon crystal growth are summarized, with special emphasis on the influence of convections on transportation and mixing in the melt. Included dre experiments on oxygen concentration distribution in silicon melt during crystal growth, silica dissolution and SiO evaporation rates, and a theoretical analysis of the conservation of oxygen atoms in the melt. Oxygen concentration distribution is uniform through the bulk of the melt. This is mainly due to thermal convective mixing. A steep concentration gradient exists at the melt-silica crucible interface. The rate of oxygen transfer through this interface by the crucible dissolution is determined by diffusion in a melt layer with thickness δ_x, which is mainly controlled by forced convection due to crucible rotation and thermal convection adjacent to this interface.
日本結晶成長学会の論文
1988-07-25